3RD INTERNATIONAL CONGRESS ON TECHNOLOGY - ENGINEERING & SCIENCE - Kuala Lumpur - Malaysia (2017-02-09)

Investigation Of Ingaasn And Ingaasp For Diode Laser Application
This paper presents the analysis and design of InGaAsN / GaAs and InGaAsP / InP laser diodes. The objective is to exploit the properties of the InGaAsN and InGaAsP alloys to propose a laser structure capable of meeting the needs of access networks for optical telecommunications. The simulation work focuses on DFT and the modeling of the band structure.We illustrate the properties of a quantum well in the material depending essentially on the addition of nitrogen or phosphorus on the matrix of. the ternary InGaAs. fig.1 The GaInAsP / InP is more suitable for applications requiring a high operating temperature. T-values greater than 100 ° K have been reported in continuous operation [7-9] with bandwidths higher than 10 Gbit /s have been demonstrated from Perrot Fabry (DFB) structure fig.2a and fig.2 b. Nitrogen is characterized by an increase in the wavelength. Figure1: DOS spectrum for GaAsN where Nitrogen is present obtained by DFT compotation[1] For the InGaAsP, the same result can be reached by the introduction of phosphorus in InGaAs matrix. In the case of the GaInNAs / GaAs and InGaAsP / InP quaternaries, the wavelength can reach the near infrared 1.33 μm to 1.55 μm respectively. These wavelengths are in great demand in others applications such as medicine and the environment. [2,3] The study deals with the influence of the properties of the active medium InGaAsN and InGaAsP on the operation of laser diodes: their frequency and their time dependence as well as their amplitude and frequency modulation.
Abdallah Ouerdane