7TH INTERNATIONAL CONGRESS ON TECHNOLOGY - ENGINEERING & SCIENCE - Kuala Lumpur - Malaysia (2019-08-08)

A 1.8V CMOS 180nm Power Amplifier with Integrated Phase Linearizer
In this paper, a single stage power amplifier (PA) for Bluetooth Low Energy (BLE) application using a novel phase linearizer technique is proposed. Phase linearizer is integrated at the gate of the PA so that the effect of parasitic Cgs capacitance of the main transistor is compensated by the linearizer. Thus, it improves the linearity without trading-off the power added efficiency at low power operation. The single stage power amplifier with integrated phase linearizer is designed in CMOS 180nm technology process. The area of the chip is 2.25mm2. The proposed design delivers a power gain more than 10dB from 2.4GHz to 2.5GHz. At the operating frequency of 2.45GHz, the power amplifier exhibits a power gain of 13.99dB with unconditional stability from 1GHz to 10GHz. Biased at a low quiescent current of 14mA, it presents a maximum output power of 15.94dBm with 40.1% power added efficiency, 20dBm OIP3 and the maximum power consumption of 104.3mW at 2.45GHz with supply voltage headroom of 1.8V. The proposed linearization scheme proved to be an excellence solution for BLE transceivers.
Miss Premmilaah Gunasegaran, Dr. Jagadheswaran Rajendran, Assoc. Prof. Harikrishnan Ramiah, Mr. Zulfiqar Ali Abd Aziz