6TH International Congress on Technology - Engineering - Kuala Lumpur3 - Malaysia (2018-07-19)

Effect Of Post-deposition Annealing Temperature On The Resistive Switching Characteristics Of R-aptes Layer

In our previous work, we demonstrated that the gamma-aminopropyltriethoxysilane (r-APTES) layer exhibited a unipolar resistive switching behavior under repetitive unidirectional ramp voltage sweep. In this paper, we report that the r-APTES layer can also have bipolar resistive switching characteristics if instead a forward/backward ramp voltage is applied. It is noted that the post-deposition annealing (PDA) temperature is a crucial factor for the bipolar resistive switching characteristics such as the switching voltages and the resistance of high-resistance state (RHRS) to that of the low-resistance state (RLRS) ratio.
You-Lin Wu, Jing-Jenn Lin, Jyun-Yuan Huang