4TH International Congress on Technology - Engineering & SCIENCE - Kuala Lumpur - Malaysia (2017-08-05)
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Effects Of Ageing Time On The Electrical Characteristics Of Zn/ZnSe/n-gaas/in And Cd/CdSe/n-gaas/in Structures
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ZnSe and CdSe interfacial layers used in Zn/ZnSe/n-GaAs/In and Cd/CdSe/n-GaAs/In structures have been deposited by the Successive Ionic Layer Adsorption and Reaction (SILAR) method and the effects of aging time on the characteristic parameters such as ideality factor, barrier height and series resistance, are examined. The current-voltage (I-V) measurements of these structures were immediately made at room temperature in dark conditions. To investigate the effect of aging time, the I-V measurements of the sandwich structures have been repeated after 1, 3, 5, 15, 30, 45, 60, 75, 90, 105, 120, 135, 150 and 165 days. These results show that the diodes are almost stable.
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Mustafa SAGLAM, Betül GÜZELDİR
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